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Category International Journal
Paper Title Flexible multi-level resistive memory with high current ratio by electrical triggering into insulating layer
Journal name Organic Electronics
Author Sin-Hyung Lee, In-Ho Lee, Chang-Min Keum, Min-Hoi Kim, Chiwoo Kim, Sin-Doo Lee
SCI Y Vol in press
page Year/date 2017/11/02
Acknowledgements This work was supported in part by Samsung Display Co. and the
Brain Korea 21 Plus Project in 2017.
Keyword Resistive memory, , Multi-level memory, , Electrical triggering, , Unipolar mode, , High current ratio
Abstract We demonstrate a flexible multi-level resistive memory device, based on the concept of electrical triggering into an insulating layer, which exhibits a high current ratio between two memory states in the unipolar mode of operation. Due to the presence of a triggering zone in unit memory cell, three resistive memory states having different domain sizes of the conductive filaments are achieved. Each memory state is readable without the disturbances by other states and the current ratio is as high as 103. The multi-level memory states are found to be well preserved during bending and applicable for constructing flexible and high-density data storage systems.

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