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Category International Journal
Paper Title Dependence of Bias Stress on Hydrophobicity of Gate Insulator in Solution-Processed Organic Thin-Film Transistors
Journal name Journal of Nanoscience and Nanotechnology
Author Wan-Woo Noh, Sin-Hyung Lee, Gyujeong Lee, In-Ho Lee, Hea-Lim Park, Min-Hoi Kim
SCI Y Vol 16
page 8618 Year/date 2016/08/01
Acknowledgements This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-0028422)
Keyword CYTOP, Gate Bias Stress, Hydrophobicity, Solution-Processed Organic Thin-Film Transistors, TIPS-Pentacene
Abstract We demonstrated the effect of the hydrophobicity of a gate insulator on the bias stress in a solution-processed organic thin-film transistor (OTFT). Without changing the surface morphology, only the hydrophobicity of the gate insulator was systematically tailored to achieve the electrical stability of the OTFT against the bias stress. The shift of the threshold voltage (V TH) by the gate bias stress was found to decrease with increasing the hydrophobicity of the gate insulator. The shift of V TH in the optimized OTFT was as small as −1.09 V under the gate bias stress for 1000 s.

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