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Category International Proceeding
Paper Title Double Polymer Layer for a High Dielectric Gate Insulator in 6, 13-bis(triisopropylsilylethynyl)-Pentacene Field-Effect Transistor
Conference name IMID
Author Won-Ho Kim, Jin-Hyuk Bae, Min-Hoi Kim, Chang-Min Keum, Sin-Doo Lee
Paper code Place Seoul, Korea
page Year/date 2010/10/11
Acknowledgements This work was supported by Korea Ministry of Knowledge Economy through the SystemIC-2010 project
Keyword TIPS-pentacene FET, high dielectric polymer, low operating voltage
Abstract We report on the reduction of the operating voltage using a high dielectric polymeric insulator in the 6,13-bis(triisopropylsilylethynyl) (TIPS)-pentacene field-effect transistor (FET). The paraelectric poly(vinyl phenol) was prepared as a screening layer on a high dielectric ferroelectric poly(vinylidene fluoride-trifluoroethylene) insulator to eliminate the hysteresis in the FET. It is found that the double layered insulator in our TIPS-pentacene FET reduces the operating voltage by a factor of about three.
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